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| Product Specification Silicon NPN Power Transistor 2SC4060 DESCRIPTION High Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V(Min) High Switching Speed High Reliability APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25ae Junction Temperature Storage Temperature Range VALUE 600 450 7 20 40 7 14 150 150 -55~150 ae ae UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.83 UNIT ae /W Website www.jmnic.com Product Specification Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC4060 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 450V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 10A; VCE= 5V 10 hFE-2 DC Current Gain IC= 1mA; VCE= 5V 5 fT Current-Gain--Bandwidth Product IC= 2A; VCE= 10V 20 MHz Switching Times ton Turn-on Time IC= 10A,IB1= 2A; IB2= -4A RL= 15| ; VBB2= 4V 0.5 |I s tstg Storage Time 2.0 |I s tf Fall Time 0.2 |I s Website www.jmnic.com 2 |
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